qs043-402-203712/5 ???`? ??? ? ?2 dimension:mm ????g?R ollector-mitter oltage ` ? g R ate-mitter oltage ollector urrent p ? ollector ower issipation unction emperature ange torage emperature ange ~ F R(erminal to ase ,inute) solation oltage , odule ase to eatsink . . ounting orque usbar to ain erminal pdmb200bs12 . PDMB200BS12C . ? (kgf?cm) . . . ollector-mitter ut-ff urrent = 1200v, = 0v ?q. ` ? ate-mitter eakage urrent = 20v, = 0v . ? ????g??R ollector-mitter aturation oltage = 200a, = 15v . . ` R ate-mitter hreshold oltage h = 5v, = 200ma . . nput apacitance = 10v, = 0v,= 1mh 12,600 N r g ise ime . . `??rg urn-on ime . . r g all ime . . ???rg witching ime `???rg urn-off ime = 600v l = 3.0 g = 7.5 = 15v . . ? ?`?`??`? orward urrent . . . R eak orward oltage = 200a, = 0v . . r g everse ecovery ime = 200a, = -10v i/t= 400a/s . . ? . . . . hermal mpedance iode th(j-c) junction to case tcy?? . 7(g2) 6(e2) 5(e1) 4(g1) (c1) 3 (e2) 2 (c2e1) 1 108 93 0.25 14 14 14 1111 3-m6 4-? 6. 5 62 13 11 20 3 2 1 7 6 5 4 6 15 6 0.25 48 242525 16 16 16 9 9 30 +1.0 - 0.5 23 8 7 label 2-?6.5 23.0 23.0 17.0 4 18.0 4 3-m5 16.0 0.25 14.0 48.0 12. 0 12. 0 12.0 11. 0 11.0 80 94.0 1 2 3 7 6 5 4 p d m b 200 b s 1 2 p d m b 200 b s 1 2 c 30 +1.0 - 0.5 14 9 14 9 14 4-fasten tab #110 t=0.5 7.5 21.2 7 label
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3$ 99e99?9t999?9?9y9t 99e99?9t999?9?9y9t9? 0 4 8 121620 0 2 4 6 8 10 12 14 16 gate to emitter voltage v ge (v) collector to emitter voltage v ce (v) fig.3 - collector to emitter on voltage vs. gate to emitter voltage (typical) t c =25c i c =100a 400a 200a 0 4 8 121620 0 2 4 6 8 10 12 14 16 gate to emitter voltage v ge (v) collector to emitter voltage v ce (v) fig.4 - collector to emitter on voltage vs. gate to emitter voltage (typical) i c =100a 400a t c =125c 200a 0 200 400 600 800 1000 1200 1400 0 100 200 300 400 500 600 700 800 total gate charge qg (nc) collector to emitter voltage v ce (v) gate to emitter voltage v ge (v) fig.5 - gate charge vs. collector to emitter voltage (typical) 0 2 4 6 8 10 12 14 16 v ce =600v 400v 200v r l =3.0 ( t c =25c 0.1 0.2 0.5 1 2 5 10 20 50 100 200 30 100 300 1000 3000 10000 30000 100000 300000 collector to emitter voltage v ce (v) capacitance c (pf) fig.6 - capacitance vs. collector to emitter voltage (typical) cies coes cres v ge =0v f=1mh z t c =25c 012345 0 50 100 150 200 250 300 350 400 collector to emitter voltage v ce (v) collector current i c (a) fig.1 - output characteristics (typical) t c =25c 11v 10v v ge =20v 8v 7v 12v 15v 9v 012345 0 50 100 150 200 250 300 350 400 collector to emitter voltage v ce (v) collector current i c (a) fig.2 - output characteristics (typical) t c =125c 11v 10v v ge =20v 8v 7v 12v 15v 9v
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3$ 99e99?9t999?9?9y9t 99e99?9t999?9?9y9t9? 3 10 30 100 0.03 0.1 0.3 1 3 10 series gate impedance r g ( ( ) switching time t (s) fig.8 - series gate impedance vs. switching time (typical) v cc =600v i c =200a v ge =15v t c =25c resistive load tf tr (v ce ) ton toff 0 50 100 150 200 250 0.01 0.03 0.1 0.3 1 3 10 collector current i c (a) switching time t (s) fig.9 - collector current vs. switching time t off t f t r(ic) t on v cc =600v r g =7.5 ( v ge =15v t c =125c inductive load 3103050 0.02 0.05 0.1 0.2 0.5 1 2 5 10 series gate impedance r g ( ( ) switching time t (s) fig.10 - series gate impedance vs. switching time v cc =600v i c =200a v ge =15v t c =125c inductive load tf tr (i c ) ton toff 0 50 100 150 200 250 300 0 10 20 30 40 50 60 collector current i c (a) switching loss e sw (mj/pulse) fig.11 - collector current vs. switching loss e off e on v cc =600v r g =7.5 ( v ge =15v t c =125c inductive load e rr 3103050 3 10 30 100 200 series gate impedance r g ( ( ) switching loss e sw (mj/pulse) fig.12 - series gate impedance vs. switching loss e off e on v cc =600v i c =200a v ge =15v t c =125c inductive load e rr 0 50 100 150 200 0 0.4 0.8 1.2 1.6 2 collector current i c (a) switching time t (s) fig.7 - collector current vs. switching time (typical) t off t f t r(v ce ) t on v cc =600v r g =7.5 ( v ge =15v t c =25c resistive load
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3$ 99e99?9t999?9?9y9t 99e99?9t999?9?9y9t9? 01234 0 100 200 300 400 forward voltage v f (v) forward current i f (a) fig.13 - forward characteristics of free wheeling diode (typical) t c =25c t c =125c 0 400 800 1200 1600 2000 10 :?:? :?:?:? :?:?:? :?:?:?:? -di/dt (a/s) peak reverse recovery current i rrm (a) reverse recovery time trr (ns) fig.14 - reverse recovery characteristics (typical) i rrm trr i f =200a t c =25c t c =125c 10 -5 10 -4 10 -3 10 -2 10 -1 110 1 3x10 -4 1x10 -3 3x10 -3 1x10 -2 3x10 -2 1x10 -1 3x10 -1 1 time t (s) transient thermal impedance rth (j-c) (c/w) fig.16 - transient thermal impedance t c =25c 1 shot pulse frd igbt 0 200 400 600 800 1000 1200 1400 0.1 :?:?:? :?:?:? :? :? :? :?:? :?:? :?:? :?:?:? :?:?:? :?:?:? :?:?:?:? collector to emitter voltage v ce (v) collector current i c (a) fig.15 - reverse bias safe operating area (typical) r g =7.5 ( , v ge =15v, t c =125c
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